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APTGF100A120T3AG
Phase leg NPT IGBT Power Module Power Module
29 30 31 32 13
VCES = 1200V IC = 100A @ Tc = 100C
Application * * * * Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control
4 3
Features
26 22 27 23 28 25 R1
*
8 7
16
18
19
20
14
28 27 26 25 29 30
23 22
20 19 18 16 15
* * * * *
Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated Very low stray inductance Kelvin emitter for easy drive Internal thermistor for temperature monitoring High level of integration AlN substrate for improved thermal performance
31 32 2 3 4 7 8 10 11 12
14 13
Benefits * * * * * Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant
Pins 29/30/31/32 must be shorted together Pins 26/27/28/22/23/25 must be shorted together to achieve a phase leg Pins 16/18/19/20 must be shorted together
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C
TC = 100C
TC = 25C TC = 25C TJ = 150C
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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1-5
APTGF100A120T3AG - Rev 0
Max ratings 1200 130 100 200 20 780 200A @ 1150V
Unit V A V W
May, 2009
APTGF100A120T3AG
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25C VGE =15V IC = 100A Tj = 125C VGE = VCE , IC = 4mA VGE = 20V, VCE = 0V Min Typ 3.2 3.9 5.5 Max 250 3.7 6.5 600 Unit A V V nA
4.5
Dynamic Characteristics
Symbol Characteristic Cies Coes Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Short Circuit data Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE= 15V ; VCE=600V IC=100A Inductive Switching (25C) VGE = 15V VBus = 600V IC = 100A RG = 5.6 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 100A RG = 5.6 VGE = 15V Tj = 125C VBus = 600V IC = 100A Tj = 125C RG = 5.6 VGE 15V ; VBus = 900V tp 10s ; Tj = 125C Min Typ 6.5 1 0.5 1.1 120 50 310 20 130 60 360 30 12 mJ 5 650 A Max Unit nF C
ns
ns
Reverse diode ratings and characteristics
Symbol Characteristic VRRM IRM IF VF trr Qrr
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 125C
Tc = 100C
Min 1200
Typ
Max 150 600
Unit V A A
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage
VR=1200V
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
Reverse Recovery Time Reverse Recovery Charge
3400
nC
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2-5
APTGF100A120T3AG - Rev 0
IF = 60A VR = 800V di/dt =400A/s
300 380 720
ns
May, 2009
IF = 60A IF = 120A IF = 60A
60 2.6 3.2 1.8
3.1 V
APTGF100A120T3AG
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.16 0.50 150 125 100 4.7 110 Unit
C/W
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
V C N.m g
To heatsink
M4
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol R25 R25/R25 B25/85 B/B Characteristic Resistance @ 25C T25 = 298.15 K TC=100C
RT = R25 1 1 RT: Thermistor value at T exp B25 / 85 T - T 25
T: Thermistor temperature
Min
Typ 50 5 3952 4
Max
Unit k % K %
SP3 Package outline (dimensions in mm)
1
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
www.microsemi.com
3-5
APTGF100A120T3AG - Rev 0
12
May, 2009
17
28
APTGF100A120T3AG
Typical Performance Curve
Output Characteristics (VGE=15V) Output Characteristics 200 175
TJ=25C TJ = 125C VGE=20V VGE=12V VGE=15V
200 175 150
IC (A)
150 IC (A) 125 100 75
125 100 75 50 25 0 0 1 2 3 VCE (V) 4 5 6
TJ=125C
VGE=9V
50 25 0 0 1 2 3 4 VCE (V) 5 6
200 175 150
Transfert Characteristics 35 30 25 E (mJ)
TJ=125C
Energy losses vs Collector Current
VCE = 600V VGE = 15V RG = 5.6 TJ = 125C
Eon
125 IC (A) 100 75 50 25 0 5 6 7 8 9 10 11 12 VGE (V) Switching Energy Losses vs Gate Resistance 40 35 30 E (mJ) 25 20 15 10 5 0 0 10 20 30 40 Gate Resistance (ohms) 50
Eoff VCE = 600V VGE =15V IC = 100A TJ = 125C Eon TJ=25C
20 15 10 5 0 0 25 50 75 100 125 150 175 200 IC (A) Reverse Bias Safe Operating Area 250 200
Eoff
IC (A)
150 100 50 0 0 300 600 900 1200 1500 VCE (V)
VGE=15V TJ=125C RG=5.6
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.2 Thermal Impedance (C/W)
IGBT
0.16 0.12 0.08 0.04 0.9
0.5 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10
0.05 0 0.00001
rectangular Pulse Duration (Seconds)
www.microsemi.com
4-5
APTGF100A120T3AG - Rev 0
May, 2009
0.7
APTGF100A120T3AG
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 180 150 120 90 60 30 0
hard switching ZCS ZVS VCE=600V D=50% RG=5.6 TJ=125C TC=75C
Forward Characteristic of diode 125 100
TJ=125C
IF (A)
75 50 25 0
TJ=25C
20
40
60
80 IC (A)
100
120
140
0
0.5
1
1.5 2 VF (V)
2.5
3
3.5
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.6 Thermal Impedance (C/W)
Diode
0.5 0.4 0.3 0.2 0.1 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 Single Pulse 0.001 0.01 0.1 1 10
0 0.00001
rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
5-5
APTGF100A120T3AG - Rev 0
May, 2009

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